Growth of short-period InAs/GaSb superlattices for infrared sensing

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Theoretical study of nitride short period superlattices.

Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and n...

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New infrared detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous infrared sensing applications. One material system has shown great theoretical and experimental promise for these applications: InAs/InxGa1KxSb type-II superlattices. These superlattices offer a large design space for adjusting not only th...

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Infrared Reflectivity Spectroscopy of Optical Phonons in Short-period AlGaN/GaN Superlattices

GaN and AlN compounds have been proven useful in wide bandgap microelectronics and optoelectronics. Also properties of bulk GaN and AlN have been studied extensively. However, many characteristics of AlGaN/GaN superlattices are not well known. In particular, the properties of phonons have not been determined. In order to determine phonon properties, this study measured infrared reflectivity spe...

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Influence of various growth parameters on the interface abruptness of AlAs/GaAs short period superlattices

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ژورنال

عنوان ژورنال: JOURNAL OF INFRARED AND MILLIMETER WAVES

سال: 2012

ISSN: 1001-9014

DOI: 10.3724/sp.j.1010.2011.00511